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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1912
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1912 is a switching device which can be driven directly by a 2.5-V power source. The PA1912 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
2.8 0.2
PACKAGE DRAWING (Unit : mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
6
5
4
1.5
0 to 0.1
1 2 3
FEATURES
* Can be driven by a 2.5-V power source * Low on-state resistance RDS(on)1 = 50 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)2 = 52 m MAX. (VGS = -4.0 V, ID = -2.5 A) RDS(on)3 = 70 m MAX. (VGS = -2.5 V, ID = -2.5 A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type)
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
PA1912TE
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
-12 10 4.5 18 0.2 2 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode Marking: TD
Body Diode
Source
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR-4 board, t 5 sec. Remark
PT2 Tch Tstg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13806EJ2V0DS00 (2nd edition) Date Published July 1999 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998, 1999
PA1912
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -12 V, VGS = 0 V VGS = 10 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -2.5 A VGS = -4.0 V, ID = -2.5 A VGS = -2.5 V, ID = -2.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -6 V ID = -2.5 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -4.5 A VGS = -4.0 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 10 A / s -0.5 3 -0.90 9.3 39 40 53 810 241 122 304 532 406 796 5.6 2.2 2.6 0.86 1.1 4.3 50 52 70 MIN. TYP. MAX. -10 10 -1.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
D.U.T. IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D13806EJ2V0DS00
PA1912
TYPICAL CHARCTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
-100
d ite im V)
ID(DC)
FORWARD BIAS SAFE OPERATING AREA
Single Pulse Mounted on 250mm2 x 35m copper pad connected to drain electrode in 50mm x 50mm x 1.6mm FR-4 board. ID(pulse) PW =1 m s PW =1 0m PW s =1 00 PW m =5 s s
dT - Derating Factor - %
ID - Drain Current - A
80
-10
60
) L .5 4 on S( = - RD GS
(V
40
-1
20
0
30
60
90
120
150
-0.1
-1
-10
-100
TA - Ambient Temperature - C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -20 -16 -12 VGS = -2.5 V -8 -4 VGS = -4.5 V -100 -10
FORWARD TRANSFER CHARACTERISTICS VDS = -10 V
ID - Drain Current - A
ID - Drain Current - A
VGS = -4.0 V
-1 -0.1 -0.01 -0.001 -0.0001
TA = 125C 75C
TA = 25C -25C
0
-0.2
-0.4
-0.6
-0.8
-1.0
-0.00001
0
-1.0
-2.0
-3.0
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cut-off Voltage - V
| yfs | - Forward Transfer Admittance - S
-1.5
VDS = -10 V ID = -1 mA
100
VDS = -10 V TA = -25C 25C 75C 125C
10
-1.0
1
0.1
-0.5 -50
0
50
100
150
0.01 -0.01
-0.1
-1
-10
-100
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet D13806EJ2V0DS00
3
PA1912
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = -2.5 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = -4.0 V
100
TA =125 C
50
TA = 75 C TA = 25 C
80
TA =125 C
40
60
TA = 75 C TA = 25 C TA =-25C
TA =-25C
40 -0.01
-0.1
-1
-10
-100
30 -0.01
-0.1
-1
-10
100
ID - Drain Current - A
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
60
VGS = -4.5 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 ID = -2.5 A 60
VGS =-2.5 V
50
TA =125 C TA = 75 C
VGS =-4.0 V
50
VGS =-4.5 V
40
TA = 25 C
40
TA =-25C
30 -0.01
-0.1
-1
-10
-100
30 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = -2.5 A 80
Ciss, Coss, Crss - Capacitance - pF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 f = 1 MHz VGS = 0 V
1000
60
Ciss Coss
40
100
Crss
20
0
-2
-4
-6
-8
-10
10 -0.1
-1.0
-10
-100
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet D13806EJ2V0DS00
PA1912
5
10000
SWITCHING CHARACTERISTICS 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
td(on), tr, td(off), tf - Switching Time - ns
IF(S-D) - Diode Forward Current - A
10
1000 td(off) td(on) 100
tf tr
1
0.1
10 -0.1
-1
VDD = -6 V VGS(on) = -4.0 V RG = 10
-10
0.01 0.4
0.6
0.8
1.0
1.2
ID - Drain Current - A
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS -8
VDS - Drain to Source Voltage - V
ID = -4.5 A
-6 VDD = -10 V -6 V -4
-2
0
2
4
6
8
10
QG - Total Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single Pulse
rth(t) - Transient Thermal Resistance - C/W
Without Board
100
Mounted on 250mm2x35m copper pad connected to drain electrode in 50mmx50mmx1.6mm FR-4 board
10
1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet D13806EJ2V0DS00
5
PA1912
[MEMO]
6
Data Sheet D13806EJ2V0DS00
PA1912
[MEMO]
Data Sheet D13806EJ2V0DS00
7
PA1912
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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